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Same model may have multiple batches, images only for reference.
SSS1N50B
Same model may have multiple batches, images only for reference.

SSS1N50B

Part No SSS1N50B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFETs NCh/500V/1.2a/5.5Ohm
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 1.5 A
Drain to Source Breakdown Voltage 500 V
Drain to Source Resistance 4.1 Ω
Element Configuration Single
Fall Time 35 ns
Gate to Source Voltage (Vgs) 30 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 23 W
Resistance 5.5 Ω
Rise Time 40 ns
RoHS Compliant
Turn-Off Delay Time 35 ns
Win Source Part Number 1096328-SSS1N50B
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SSS1N50B CAD Model

Description

The Fairchild/ON Semiconductor SSS1N50B is an RF MOSFET with a maximum power dissipation of 23W and a resistance of 5.5Ω.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 1.5A
  • Turn-Off Delay Time: 35ns
  • Drain-Source Resistance: 4.1Ω
  • Gate-Source Voltage (Vgs): 30V
  • Operating Temperature Range: -55°C to 150°C
  • Configuration: single element
  • RoHS Compliant: Yes
  • Supply and Demand Status: shortage

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