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FIR5N50LG

Part No FIR5N50LG
Manufacturer First Components International
Catalog Miscellaneous
Description N-Channel Power MOSFET-D
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer First Components International
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 823321-FIR5N50LG
Ultra Librarian 3D Model Ultra Librarian FIR5N50LG CAD Model

Description

The FIR5N50LG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by First Components International. This transistor is designed for high-voltage, high-current switching applications. It is commonly used in power supplies, motor control circuits, and other power electronics applications. The MOSFET's characteristics make it suitable for efficient and reliable switching performance.

Applications:

  • Power supplies: Used in switching power supplies for voltage regulation and power conversion.
  • Motor control: Employed in motor drives for controlling the speed and torque of electric motors.
  • Lighting control: Integrated into LED lighting systems for dimming and switching control.
  • Inverters: Used in DC-AC inverters for converting DC power to AC power.
  • Battery chargers: Integrated into battery charging circuits for controlling the charging process.

Features:

  • N-Channel MOSFET: Offers efficient switching performance with low on-resistance.
  • High Voltage: Rated for a drain-source voltage of 500V, allowing for use in high-voltage applications.
  • High Current: Capable of handling a continuous drain current of 5A.
  • Low On-Resistance: Reduces power loss and improves efficiency.
  • Fast Switching Speed: Enables high-frequency switching operations.

Benefits:

  • Efficient Power Conversion: Minimizes power loss and improves efficiency in power supplies and other applications.
  • Reliable Switching Performance: Provides stable and consistent switching operation.
  • Versatile Applications: Suitable for a wide range of power electronics applications.
  • Reduced Heat Dissipation: Low on-resistance reduces heat generation, improving reliability.
  • Improved System Performance: Enhances the overall performance and efficiency of electronic devices.

Additional Details:

The FIR5N50LG has a gate-source voltage rating of ±30V and a maximum power dissipation of 50W. The on-resistance (RDS(on)) is typically 1.2 Ohms at a gate-source voltage of 10V. It is available in a TO-220 package, which provides good thermal performance. The operating temperature range is typically -55°C to +150°C. This MOSFET is often used with heat sinks to dissipate heat and maintain a safe operating temperature. The FIR5N50LG is a reliable and efficient transistor suitable for a variety of high-voltage, high-current switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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