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Same model may have multiple batches, images only for reference.
MJH10012 ON Semiconductor
Same model may have multiple batches, images only for reference.

MJH10012

Part No MJH10012
Manufacturer Freescale Semiconductor - NXP
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 400V 10A TO3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Freescale Semiconductor - NXP
Package Bulk
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 2A, 10A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 3A, 6V
Power - Max 118 W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 641085-MJH10012
Ultra Librarian 3D Model Ultra Librarian MJH10012 CAD Model

Description

The Freescale Semiconductor - NXP MJH10012 is a single bipolar transistor from Freescale Semiconductor - NXP.

  • Category: Discrete Semiconductor Products, Transistors - Bipolar (BJT) - Single
  • Type: NPN - Darlington
  • Power: 118W
  • Voltage Breakdown: 400V
  • Collector Current: 10A
  • Vce Saturation: 2.5V @ 2A and 10A
  • Current Cutoff: 1mA
  • DC Current Gain (hFE): 300 @ 3A and 6V
  • Mounting: Through-Hole
  • Package: TO-204AA, TO-3
  • Operating Temperature: -55°C to 150°C
  • Status: Active
  • Affected by: REACH Regulations
  • Features: High Power Handling Capabilities
  • Suitable for: Various Applications Requiring Bipolar Transistors

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