The MMBR536LT1 is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors (formerly Freescale). It is designed for use in small signal amplification and switching applications.

Applications

• Small Signal Amplification
• Switching Circuits
• Driver Circuits
• Load Switches
• General Purpose Amplification

Features

• PNP Transistor
• Low Saturation Voltage
• High Current Gain (hFE)
• Surface Mount Package (SOT-23)
• Collector-Emitter Voltage (VCEO): -30V
• Collector Current (IC): -200mA

Benefits

• Efficient Amplification: High current gain allows for efficient amplification of small signals.
• Low Power Dissipation: Low saturation voltage minimizes power loss in switching applications.
• Compact Design: Small surface mount package saves valuable board space.
• Reliable Performance: Designed for reliable operation in various electronic circuits.
• Simplified Circuit Design: Easy to integrate into various amplifier and switching circuits.

The MMBR536LT1 offers reliable performance in small signal amplification and switching applications. Its high current gain and low saturation voltage contribute to efficient operation. The surface mount package allows for automated assembly and high-density circuit board designs. This transistor is well-suited for use in battery-powered devices and other applications where power efficiency is critical. Its -30V collector-emitter voltage and -200mA collector current make it suitable for a wide range of low-power applications.