The MRF326 is a 30 W, 12.5 V, 175 MHz RF Power Transistor from NXP Semiconductors (formerly Freescale). It's designed for VHF power amplifier applications, offering a combination of gain, ruggedness and reliability. This transistor is suited for mobile radio applications and other VHF communication systems.

Applications:

• Mobile radio transmitters
• VHF communications equipment
• Amateur radio amplifiers
• Industrial RF generators
• Driver stages for higher power amplifiers

Features:

• High output power: 30 W PEP or CW
• Frequency range: up to 175 MHz
• 12.5 V operation
• High gain: 12 dB typical at 175 MHz
• Ruggedness tested
• Gold metallization for high reliability

Benefits:

• Effective signal transmission with high output power
• Reduced drive power requirements due to high gain
• Stable performance in mobile environments
• Long-term reliability
• Easier integration into existing systems

Additional Details:

The MRF326 is constructed using bipolar transistor technology. Its ruggedness ensures that it can withstand high VSWR conditions, which is important in mobile and portable applications where antenna impedance can vary. The use of gold metallization contributes to its high reliability and long operating life. It typically operates from a 12.5V supply, which is a common voltage level in mobile communication devices. This transistor is often used as a driver stage for higher power amplifiers or as the final amplifier in lower-power transmitters.