The MRF7S18170H is a 170 W LDMOS RF power transistor designed for use in base station applications operating in the 1805 to 1880 MHz frequency range. It is manufactured by Freescale Semiconductor (now NXP Semiconductors).

Applications:

• Base station amplifiers: Used in the final stage of amplifiers for wireless communication base stations.
• Cellular infrastructure: Signal amplification in cellular networks.
• Public Mobile Radio (PMR): High power amplification for PMR systems.
• Wireless infrastructure: Amplification in various wireless communication systems.
• Industrial RF heating: RF power generation for industrial heating processes.

Features:

• LDMOS technology: Provides high power gain and efficiency.
• 170 W output power: High power output for demanding applications.
• 1805 to 1880 MHz frequency range: Optimized for operation in the 1.8 GHz band.
• High gain: Simplifies amplifier design by requiring less input power.
• High efficiency: Reduces power consumption and heat dissipation.
• Integrated ESD protection: Protects the device from electrostatic discharge damage.

Benefits:

• Increased range: Higher output power extends the coverage area of base stations.
• Improved signal quality: High gain and efficiency contribute to better signal-to-noise ratio.
• Reduced operating costs: High efficiency minimizes power consumption and cooling requirements.
• Simplified amplifier design: High gain reduces the complexity of the amplifier circuit.
• Enhanced reliability: Robust design ensures long-term reliability.

Additional Details:

The MRF7S18170H operates with a supply voltage of 28 V. It is designed for use in Doherty amplifiers, which further enhance efficiency. The device is available in a NI-780 package. It requires proper heat sinking to dissipate heat generated during operation. The MRF7S18170H is a key component in high-power RF amplifiers used in various wireless communication systems. Its high gain and efficiency make it a popular choice for base station applications. This transistor is designed for ruggedness and reliability, even under demanding operating conditions. The excellent linearity characteristics help minimize signal distortion. Advanced LDMOS process technology provides high power gain, ruggedness, and broadband performance.