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2MBI150SC-120

Part No 2MBI150SC-120
Manufacturer Fuji Electric
Catalog OEM Parts (0 - 9)
Description IGBT MODULE ( S-Series ), 150 Amp, 1200 Volt, 2-PACK IGBT, Features NPT-Technology Square SC SOA at 10 x IC High...
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Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1029474-2MBI150SC-120
Categories OEM Parts(0-9)
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2MBI150SC-120 CAD Model

Description

The 2MBI150SC-120 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. This module is designed for high-power switching applications, offering efficient performance and reliability. IGBT modules combine the characteristics of MOSFETs and BJTs, providing high input impedance and high current carrying capacity.

Applications:

  • Inverter Systems
  • AC and DC Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Welding Machines
  • Induction Heating Equipment

Features:

  • High-Speed Switching
  • Low Saturation Voltage
  • High Input Impedance
  • Isolated Baseplate
  • RoHS Compliant

Benefits:

  • Efficient Power Conversion: The low saturation voltage minimizes power losses, increasing the efficiency of power conversion systems.
  • Reliable Performance: Designed for rugged industrial applications, ensuring long-term reliability and stability.
  • Simplified Thermal Management: The isolated baseplate allows for efficient heat dissipation, simplifying the thermal design of the system.
  • High Switching Frequency: Enables high-frequency operation, reducing the size and cost of passive components in the system.
  • Robust Protection: Built-in protection features safeguard the module against overcurrent and short-circuit conditions.

Additional Details:

The 2MBI150SC-120 IGBT module has a collector-emitter voltage (VCES) rating of 1200V and a collector current (IC) rating of 150A. It is crucial to refer to the datasheet for specific electrical parameters, such as gate charge (Qg), turn-on time (ton), and turn-off time (toff). The module's internal structure typically includes multiple IGBT chips connected in parallel to achieve the desired current rating. It’s imperative to ensure proper gate drive circuitry to optimize switching performance and prevent device failure. The isolated baseplate is typically made of aluminum nitride (AlN) for high thermal conductivity. Proper mounting and cooling techniques are essential to maintain the module's operating temperature within the specified limits. The module's short-circuit withstand time and maximum junction temperature are critical parameters for ensuring reliable operation under fault conditions. Additionally, the module's storage temperature range should be considered during transportation and storage. It is highly recommended to follow the manufacturer's application notes and guidelines for optimal performance and longevity.

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