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Same model may have multiple batches, images only for reference.
2SK3527-01
Same model may have multiple batches, images only for reference.

2SK3527-01

Part No 2SK3527-01
Manufacturer Fuji Electric
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet, Power, N-ch, Vdss 600V, Rds(on) 0.29 Ohm, Id +/-21A, TO-247, Pd 335W, Vgs +/-30V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package TO-247
Drain to Source Breakdown Voltage 600 V
Drain to Source Resistance 370 mΩ
Element Configuration Single
Gate to Source Voltage (Vgs) 30 V
Height 21.4884 mm
Length 15.494 mm
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 335 W
RoHS Compliant
Turn-Off Delay Time 78 ns
Turn-On Delay Time 26 ns
Width 5.0038 mm
Win Source Part Number 1182361-2SK3527-01
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fuji Electric
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK3527-01 CAD Model

Description

The 2SK3527-01 is a MOSFET transistor from Fuji Electric.

  • Application: RF
  • Configuration: Single Element
  • Case/Package: TO-247
  • Mounting Type: Through-Hole
  • Maximum Power Dissipation: 335 W
  • Breakdown Voltage: 600 V
  • Drain to Source Resistance: 370 mΩ
  • Gate to Source Voltage: 30 V
  • Operating Temperature: -55 °C to 150 °C
  • Turn-On Delay Time: 26 ns
  • Turn-Off Delay Time: 78 ns

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