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Same model may have multiple batches, images only for reference.
2SK3686-01
Same model may have multiple batches, images only for reference.

2SK3686-01

Part No 2SK3686-01
Manufacturer Fuji Electric
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet, Power, N-ch, Vdss 600V, Rds(on) 0.42 Ohm, ID+/-16A, TO-220AB, Pd 270W, VGS+/-30V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220AB
Drain to Source Breakdown Voltage 600 V
Drain to Source Resistance 570 mΩ
Element Configuration Single
Gate to Source Voltage (Vgs) 30 V
Height 15.0114 mm
Length 9.9822 mm
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 270 W
RoHS Compliant
Turn-Off Delay Time 58 ns
Turn-On Delay Time 29 ns
Width 4.4958 mm
Win Source Part Number 1037795-2SK3686-01
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK3686-01 CAD Model

Description

The Fuji Electric 2SK3686-01 is a Fuji Electric MOSFET transistor with a drain to source breakdown voltage of 600 V and a gate to source voltage (Vgs) of 30 V.

  • Drain to Source Breakdown Voltage: 600 V
  • Gate to Source Voltage (Vgs): 30 V
  • Power Dissipation: 270 W
  • Turn-On Delay Time: 29 ns
  • Turn-Off Delay Time: 58 ns
  • Drain to Source Resistance: 570 mΩ
  • Application: RF MOSFETs and FETs
  • Case/Package: TO-220AB
  • Number of Pins: 3
  • RoHS Compliance: Compliant
  • Operating Temperature Range: -55 °C to 150 °C
  • Element Configuration: Single

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