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Same model may have multiple batches, images only for reference.
6MBI75U4B-120-50
Same model may have multiple batches, images only for reference.

6MBI75U4B-120-50

Part No 6MBI75U4B-120-50
Manufacturer Fuji Electric
Catalog OEM Parts (0 - 9)
Description 6-PACK IGBT MODULE 75A 1200V TRENCH; Transistor Type: IGBT Module; Transistor Polarity: Trench; Voltage, Vces: 1200V;...
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package Module
Collector Emitter Breakdown Voltage 1.2 kV
Collector Emitter Voltage (VCEO) 2.5 V
Height 17 mm
Isolation Voltage 2.5 kV
Length 122 mm
Max Collector Current 75 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 390 W
Mount PCB
Number of Pins 35
Power Dissipation 390 W
Rise Time 320 ns
RoHS Compliant
Termination Screw
Width 62 mm
Win Source Part Number 1025645-6MBI75U4B-120-50
Categories OEM Parts(0-9)
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 6MBI75U4B-120-50 CAD Model

Description

The 6MBI75U4B-120-50 is a high power insulated gate bipolar transistor (IGBT) module designed for use in various power electronic circuits.

  • Power dissipation: 390 W
  • Collector emitter breakdown voltage: 1.2 kV
  • Collector emitter voltage: 2.5 V
  • Termination: Screw
  • Mounting: SMD (SMT)
  • Rise time: 320 ns
  • Pins: 35
  • Isolation voltage: 2.5 kV
  • RoHS compliant: Yes
  • Maximum operating temperature: 150 °C

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $84.8682 $84.8682
2+ $69.6350 $139.2700
3+ $67.4589 $202.3767
4+ $65.2829 $261.1316
5+ $63.1069 $315.5345
7+ $56.5788 $396.0516
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 110 pieces
Order Increment : 1 pcs
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