The MB85RS256 is a 256Kbit Ferroelectric Random Access Memory (FRAM) manufactured by Fujitsu Electronics America, Inc. FRAM is a non-volatile memory technology that offers fast write speeds, low power consumption, and high endurance, making it suitable for various data logging, meter reading, and industrial control applications.

Applications

• Smart meters
• Data logging systems
• Industrial control equipment
• Medical devices
• Wearable electronics

Features

• Fast write speed
• High endurance (10 trillion read/write cycles)
• Low power consumption
• Non-volatile data storage
• SPI interface
• RoHS compliant

Benefits

• Real-Time Data Logging: Fast write speeds enable real-time data logging without performance bottlenecks.
• Long Lifespan: High endurance ensures reliable data storage over an extended period, even with frequent write operations.
• Extended Battery Life: Low power consumption minimizes energy usage, extending the battery life of portable devices.
• Data Retention: Non-volatile memory retains data even when power is removed, preventing data loss.
• Easy Integration: The SPI interface simplifies interfacing with microcontrollers and other digital systems.

Technical Specifications

The MB85RS256 operates from a single power supply voltage, typically in the range of 2.7V to 3.6V. It communicates with a host microcontroller via the SPI interface. The device offers a virtually unlimited number of read/write cycles, typically specified as 10 trillion cycles. Data retention is guaranteed for many years, even at elevated temperatures. The device is available in a compact package, such as an SOIC or TSSOP, minimizing the board space required. The operating temperature range is generally specified to ensure reliable performance in various environmental conditions. The device is compliant with RoHS directives, ensuring that it does not contain hazardous substances.