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GC02MPS12-220

Part No GC02MPS12-220
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description SIC DIODE 1200V 2A TO-220-2  /  Diode Silicon Carbide Schottky 1200 V 12A (DC) Through Hole TO-220-2
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Rohs State rohs
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr GeneSiC Semiconductor
Series SiC Schottky MPS™
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 12A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 2 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 2 µA @ 1200 V
Capacitance @ Vr, F 127pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number GC02MPS12
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names 1242-1323
Standard Package 12,000
Win Source Part Number 1183025-GC02MPS12-220
Ultra Librarian 3D Model Ultra Librarian GC02MPS12-220 CAD Model

Description

The GeneSiC Semiconductor GC02MPS12-220 is a silicon carbide Schottky diode that is part of the SiC Schottky MPS™ series. It is packaged in a TO-220-2 package and has a manufacturer part number of 1183025-GC02MPS12-220. The diode has a voltage rating of 1200 V and an average rectified current of 12A (DC). The forward voltage is 1.8 V @ 2 A and the reverse recovery time is 0 ns. The capacitance is 127pF @ 1V, 1MHz and the operating temperature range is -55°C to 175°C. The diode is mounted using through-hole technology.

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