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Same model may have multiple batches, images only for reference.
GD25Q16EEIGR
Same model may have multiple batches, images only for reference.

GD25Q16EEIGR

Part No GD25Q16EEIGR
Manufacturer GigaDevice Semiconductor
Catalog Memory
Description 16MBIT NOR FLASH /3.3V /WSON 3*2  /  FLASH - NOR Memory IC 16Mb (2M x 8) SPI - Quad I/O 133 MHz 7 ns 8-USON (2x3)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr GigaDevice Semiconductor (HK) Limited
Package Tape & Reel
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 16Mb (2M x 8)
Memory Interface SPI - Quad I/O
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 70µs, 2ms
Access Time 7 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 8-XFDFN Exposed Pad
Supplier Device Package 8-USON (2x3)
Base Product Number GD25Q16
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0071
Other Names 1970-GD25Q16EEIGRDKR,1970-GD25Q16EEIGRCT,1970-GD25Q16EEIGRTR
Standard Package 3,000
Win Source Part Number 1115764-GD25Q16EEIGR
Ultra Librarian 3D Model Ultra Librarian GD25Q16EEIGR CAD Model

Description

The GD25Q16EEIGR is a 16Mb (2M x 8) FLASH - NOR Non-Volatile Memory IC with a SPI - Quad I/O interface.

  • Access Time: 7 ns
  • Clock Frequency: 133 MHz
  • Memory Format: FLASH
  • Write Cycle Time (Word): 70µs
  • Write Cycle Time (Page): 2ms
  • Voltage Supply: 2.7V to 3.6V
  • Package: 8-XFDFN Exposed Pad
  • Device Package: 8-USON (2x3)
  • Temperature Range: -40°C to 85°C (TA)

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