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GD25S512MDBIGY

Part No GD25S512MDBIGY
Manufacturer GigaDevice Semiconductor
Catalog IT infrastructure Memory
Description 512Mb(256Mx2) SPI NOR Flash WSON8
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1454945-GD25S512MDBIGY
Manufacturer GigaDevice Semiconductor
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 104MHz
Write Cycle Time - Word, Page 50µs, 2.4ms
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 24-TBGA
Supplier Device Package 24-TFBGA (6x8)
Ultra Librarian 3D Model Ultra Librarian GD25S512MDBIGY CAD Model

Description

The GD25S512MDBIGY by GigaDevice is another variant within its 512Mb(256Mx2) SPI NOR Flash memory lineup, encased in the versatile WSON8 package. This model is meticulously engineered to support high-speed data transmission and high endurance, making it particularly well-suited for advanced electronic applications that demand reliability and speed. Its dual-die structure not only doubles the data storage capacity but also enhances the overall data integrity and operational life span of the memory chip. The GD25S512MDBIGY is instrumental in sectors where performance cannot be compromised; whether it's in advanced automotive computing systems, sophisticated wearable technology, or high-speed networking equipment. Offering rapid program and erase capabilities alongside a SPI interface for swift, efficient data read/write operations, this flash memory is designed for applications where time and performance are critical. The compact nature of the WSON8 package, coupled with its high storage capacity and durability, make the GD25S512MDBIGY an attractive option for manufacturers looking to push the boundaries of technology and design.

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