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Same model may have multiple batches, images only for reference.
BUZ32 Real Image
Same model may have multiple batches, images only for reference.

BUZ32

Part No BUZ32
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.5A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 480 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573764-BUZ32
Ultra Librarian 3D Model Ultra Librarian BUZ32 CAD Model

Description

The BUZ32 is an N-channel MOSFET transistor designed for use in various electronic circuits.

  • Drain to source voltage (Vdss): 200V
  • Continuous drain current (Id): 9.5A
  • On-resistance (Rds On): 400mOhm
  • Gate-source threshold voltage (Vgs(th)): 4V
  • Package: TO-220-3
  • Maximum power dissipation: 75W
  • Status: obsolete
  • Manufacturer: Harris Corporation

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
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Availability: 20,000 pieces
MOQ: 70 pcs
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