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HGTD8P50G1S

Part No HGTD8P50G1S
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 8A, 500V P-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 500 V
Current - Collector (Ic) (Max) 12 A
Current - Collector Pulsed (Icm) 18 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Power - Max 66 W
Input Type Standard
Gate Charge 30 nC
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Standard Package 1 pcs
MSL Level 3 (168 Hours)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 597664-HGTD8P50G1S
Ultra Librarian 3D Model Ultra Librarian HGTD8P50G1S CAD Model

Description

The Harris Corporation 597664-HGTD8P50G1S is an IGBT (Insulated Gate Bipolar Transistor) in the category of Single IGBTs. It has a power rating of 66W and a maximum collector-emitter breakdown voltage of 500V.

  • Maximum collector current: 12A
  • Maximum collector pulsed current: 18A
  • Vce(on): 2.9V @ 15V and 3A
  • Gate charge: 30nC
  • Mounting: suitable for surface mount mounting
  • Package: TO-252-3, DPak package
  • Supplier device package: TO-252AA
  • Operating temperature range: -55°C to 150°C
  • ECCN: EAR99
  • MSL Level: 3, meaning it can withstand 168 hours of Moisture Sensitivity Level testing
  • REACH Status: Vendor Undefined
  • HTSUS code: 0000.00.0000

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3400 $60.3000
110+ $1.0995 $120.9450
165+ $1.0651 $175.7415
225+ $1.0307 $231.9075
290+ $0.9965 $288.9850
390+ $0.8933 $348.3870
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Availability: 6,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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