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IRF541

Name: IRF541
Brand: Harris Corporation
SKU: 604374
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRF541
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Harris Corporation
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1450 pF @ 25 V
Power Dissipation (Max)	150W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	604374-IRF541
Ultra Librarian 3D Model	Ultra Librarian IRF541 CAD Model

Alternative Products

Description

The 604374-IRF541 is an N-Channel MOSFET transistor used in discrete semiconductor products. The 604374-IRF541 is an active product from Harris Corporation.

Drain to Source Voltage (Vdss): 80V
Continuous Drain Current (Id): 28A @ 25°C
Rds On (Max): 77mOhm @ 17A and 10V
Gate Charge (Qg): 59nC @ 10V
Input Capacitance (Ciss): 1450pF @ 25V
Maximum Power Dissipation: 150W
Package: TO-220-3
Mounting Type: Through-Hole
Operating Temperature Range: -55°C to 175°C

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