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Same model may have multiple batches, images only for reference.
IRF9533 Samsung
Same model may have multiple batches, images only for reference.

IRF9533

Part No IRF9533
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604756-IRF9533
Ultra Librarian 3D Model Ultra Librarian IRF9533 CAD Model

Description

The 604756-IRF9533 is a P-Channel MOSFET (Metal Oxide) transistor designed for discrete semiconductor applications.

  • Drain to Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 10A @ 25°C
  • Maximum Rds On: 400mOhm @ 6.5A and 10V
  • Gate Charge (Qg): 45nC @ 10V
  • Package: TO-220-3
  • Mounting: Through-hole
  • Manufacturer: Harris Corporation
  • Status: Active
  • Packaging: Bulk
  • Standard Package: 1 piece

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