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Same model may have multiple batches, images only for reference.
RF1S23N06LE Real Image
Same model may have multiple batches, images only for reference.

RF1S23N06LE

Part No RF1S23N06LE
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description 23A, 60V, 0.065OHM, N-CHANNEL,
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 65mOhm @ 23A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 423 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 293206-RF1S23N06LE
Ultra Librarian 3D Model Ultra Librarian RF1S23N06LE CAD Model

Description

The RF1S23N06LE is an N-Channel MOSFET transistor designed for medium power applications.

  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 23A @ 25°C
  • On-Resistance: 65mΩ @ 23A and 5V gate-source voltage
  • Gate Threshold Voltage: 2V @ 250μA
  • Power Dissipation: 75W @ a case temperature of 25°C
  • Mounting Type: Through-hole mountable
  • Package: TO-262-3 Long Leads, I²Pak
  • Standard Package: 423 pieces
  • Manufacturer: Harris Corporation
  • Status: Active product
  • Capability: Providing reliable switching capabilities for your electronic devices.

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17+ $10.2957 $175.0269
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30+ $9.6315 $288.9450
41+ $8.6348 $354.0268
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