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RF1S9640

Name: RF1S9640
Brand: Harris Corporation
SKU: 293234
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	RF1S9640
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 200V 11A TO220AB
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Harris Corporation
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Rds On (Max) @ Id, Vgs	500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
Power Dissipation (Max)	125W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Standard Package	232 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	0000.00.0000
Win Source Part Number	293234-RF1S9640
Ultra Librarian 3D Model	Ultra Librarian RF1S9640 CAD Model

Alternative Products

Description

The 293234-RF1S9640 is a P-Channel MOSFET transistor designed for high-power applications.

Drain-to-Source Voltage Rating: 200V
Continuous Drain Current: 11A @ a case temperature of 25°C
On-Resistance: 500mΩ @ 6A and 10V gate-to-source voltage
Mounting Type: Through-hole
Package: TO-220-3
Gate Charge: 90nC @ 10V
Operating Temperature: -55°C to 150°C
Manufacturer: Harris Corporation
Status: Active product

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