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Same model may have multiple batches, images only for reference.
RFD4N06L Intersil Corporation
Same model may have multiple batches, images only for reference.

RFD4N06L

Part No RFD4N06L
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 600mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±10V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 987 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659990-RFD4N06L
Ultra Librarian 3D Model Ultra Librarian RFD4N06L CAD Model

Description

The 659990-RFD4N06L is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 4A
  • Rds On (Max) @ 1A and 5V: 600mOhm
  • Vgs(th) @ 250μA: 2.5V
  • Mounting: through-hole mounting
  • Package: TO-251-3 Short Leads, IPak
  • Maximum Power Dissipation @ Tc: 30W
  • Manufacturer: Harris Corporation
  • Status: active product

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5167 $59.4205
275+ $0.4240 $116.6000
425+ $0.4107 $174.5475
585+ $0.3975 $232.5375
755+ $0.3843 $290.1465
1,010+ $0.3444 $347.8440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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