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Same model may have multiple batches, images only for reference.
RFP10P12 GE Solid State
Same model may have multiple batches, images only for reference.

RFP10P12

Part No RFP10P12
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 300 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 660096-RFP10P12
Ultra Librarian 3D Model Ultra Librarian RFP10P12 CAD Model

Description

The RFP10P12 is an N-channel MOSFET designed for various electronic applications.

  • Type: standard MOSFET
  • Drain to Source Voltage Rating: 120V
  • Continuous Drain Current: 10A
  • Usage: suitable for medium power applications.
  • On-Resistance: 500mOhm @ a current of 5A and a gate-source voltage of 10V
  • Gate Threshold Voltage: 4V
  • Control: can be easily controlled by a compatible gate driver.
  • Maximum Power Dissipation: 75W
  • Efficiency: ensuring efficient operation even @ moderate power levels.
  • Package: TO-220-3
  • Supply: supplied in bulk.
  • Status: active
  • Manufacturer: Harris Corporation

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