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2SD789C

Part No 2SD789C
Manufacturer Hitachi, Ltd
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 50V 1A 3-Pin TO-92 Mod
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Hitachi, Ltd
Win Source Part Number 158310-2SD789C
Popularity Low
Supply and Demand Status Balance
Family Name 2SD789C
Introduction Date March 14, 2001
ECCN EAR99
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SD789C CAD Model

Description

2SD789C Transistor Description

The 2SD789C extends the trusted capabilities of the 2SD789 series, featuring enhanced characteristics for more demanding applications. This NPN transistor is purpose-built to deliver superior performance in environments where stability and efficiency are crucial.

Applications and Projects

  • High-efficiency battery chargers
  • Advanced robotic systems
  • Power conditioning equipment
  • Precision instrumentation circuits
  • Communication infrastructure components

Features and Benefits

  • Advanced saturation properties: Minimizes power losses even under heavy load conditions.
  • High-frequency operation: Optimized for high-speed switching tasks in demanding applications.
  • Extended thermal range: Reliable performance over a broader temperature spectrum.
  • Space-efficient package: Supports integration into intricate circuit designs.

Additional Details

The 2SD789C is engineered to excel in applications demanding both speed and efficiency. Its advanced saturation properties ensure minimal power loss, making it suitable for high-efficiency power systems and battery chargers. This transistor's ability to perform at high frequencies makes it ideal for handling fast switching tasks essential in advanced robotics and communication applications. Its extended thermal range supports reliable operation over varying temperature conditions, ensuring that the 2SD789C maintains performance integrity in even the most challenging environments.

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