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Same model may have multiple batches, images only for reference.
2SK360IGETL Hitachi, Ltd
Same model may have multiple batches, images only for reference.

2SK360IGETL

Part No 2SK360IGETL
Manufacturer Hitachi, Ltd
Catalog JFETs (Junction Field Effect)
Description Trans RF MOSFET N-CH 20V 0.03A 3-Pin MPAK T/R
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Hitachi, Ltd
Win Source Part Number 160187-2SK360IGETL
Popularity Low
Supply and Demand Status Limited
Family Name 2SK360-IGE
Introduction Date March 03, 2003
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK360IGETL CAD Model

Description

Description

The 2SK360IGETL is an advanced N-channel MOSFET that offers high-speed switching and low power consumption. Ideal for cutting-edge applications requiring efficient and reliable power control.

Applications

  • Industrial Automation
  • Smart Grids
  • Lighting Controls
  • Renewable Energy Systems

Features and Benefits

  • Low Power Consumption, enhancing energy savings.
  • Quick Switching Characteristics, supporting high-speed operations.
  • Enhanced Thermal Performance, improving reliability in design.

Additional Details

The 2SK360IGETL ensures superior performance in high-speed applications. It is suitable for developers focused on high-efficiency and high-power applications, offering excellent thermal management properties.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,050 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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