The HY5PS121621CFP-Y5-T is a 128Mbit DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip from Hynix Semiconductor. It is organized as 8M x 16 bits x 4 banks and designed for applications requiring high-speed, high-bandwidth memory solutions. DDR SDRAM doubles the data transfer rate of standard SDRAM by transferring data on both the rising and falling edges of the clock signal. This memory device is suitable for graphics cards, embedded systems, and other high-performance applications.

Applications

• Graphics cards for frame buffer memory.
• Embedded systems requiring high-speed memory.
• Game consoles for storing game assets.
• Video processing equipment.
• Networking devices.

Features

• Organization: 8M x 16 bits x 4 banks
• Data Rate: DDR
• Supply Voltage: 2.5V
• Package: FBGA
• Operating Temperature: 0°C to +70°C
• CAS Latency: Typically 2 or 3
• Burst Length: 2, 4, 8
• Double Data Rate: Transfers data on both clock edges

Benefits

• High Bandwidth: Provides fast data transfer rates.
• Low Voltage: Reduces power consumption.
• Double Data Rate: Doubles the data transfer rate of standard SDRAM.
• Compact Package: Saves board space.
• High Density: Provides a large memory capacity.

Additional Details

The HY5PS121621CFP-Y5-T utilizes DDR SDRAM technology to achieve high speed and low power consumption. It supports various burst lengths and CAS latencies, allowing for flexible configuration to optimize performance for specific applications. The device is packaged in a FBGA (Fine-Pitch Ball Grid Array) package, which provides excellent thermal performance and reduces board space requirements.

The 2.5V supply voltage helps to reduce power consumption, making it suitable for battery-powered applications. This DDR SDRAM is an ideal choice for systems that require high bandwidth and memory capacity.