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ICE15N60 Real Image1 ICE15N60 Real Image2
Same model may have multiple batches, images only for reference.
ICE15N60 Real Image1 ICE15N60 Real Image2
ICE15N60 Real Image1 ICE15N60 Real Image2
Same model may have multiple batches, images only for reference.

ICE15N60

Part No ICE15N60
Manufacturer Icemos Technology
Catalog Transistors - FETs, MOSFETs - RF
Description Superjunction MOSFET / N-Channel 600 V 15A (Tc) 156W (Tc) Through Hole TO-220
Datasheet
ICE15N60 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Icemos Technology
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2064 pF @ 25 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1382290-ICE15N60
Ultra Librarian 3D Model Ultra Librarian ICE15N60 CAD Model

Description

The ICE15N60 is an N-channel MOSFET from Icemos Technology. Bold the product name (e.g., BAV99S,135 → ICE15N60) and manufacturer (e.g., Nexperia USA Inc. → Icemos Technology).

  • Channel Type: N-channel
  • Package: tube
  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 15A
  • On-Resistance: 250mOhm @ 7.5A
  • Gate-Source Threshold Voltage: 3.9V
  • Power Dissipation: 156W
  • Gate Charge: 59nC @ 10V
  • Mounting Type: through-hole
  • Package/Case: TO-220
  • Operating Temperature: -55°C to 150°C

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