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Same model may have multiple batches, images only for reference.
SIHF840STRL-GE3
Same model may have multiple batches, images only for reference.

SIHF840STRL-GE3

Part No SIHF840STRL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description SIHF840STRL-GE3 N-channel MOSFET Transistor; 8.1 A; 500 V; 3-Pin D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package D2PAK
Continuous Drain Current (ID) 8.1 A
Drain to Source Resistance 850 mΩ
Element Configuration Single
Gate to Source Voltage (Vgs) 20 V
Height 4.83 mm
Input Capacitance 1.3 nF
Length 10.67 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 125 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
RoHS Compliant
Turn-Off Delay Time 49 ns
Turn-On Delay Time 14 ns
Width 9.65 mm
Win Source Part Number 1093040-SIHF840STRL-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SIHF840STRL-GE3 CAD Model

Description

The Vishay transistor is an FET MOSFET that is designed for use in RF circuits.

  • Application: RF circuits
  • Maximum Operating Temperature: 150°C
  • Continuous Drain Current: 8.1A
  • Mounting: Surface Mount Technology
  • Package: D2PAK
  • Supply and Demand: Unbalanced
  • RoHS Compliant: Yes

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