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2PC4617QMB,315

Part No 2PC4617QMB,315
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description NOW NEXPERIA 2PC4617QMB - SMALL  /  Bipolar (BJT) Transistor NPN 50 V 100 mA 100MHz 250 mW Surface Mount DFN1006B-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr NXP USA Inc.
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V
Power - Max 250 mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-101, SOT-883
Supplier Device Package DFN1006B-3
ECCN EAR99
HTSUS 8541.21.0075
Other Names NEXNXP2PC4617QMB,315,2156-2PC4617QMB,315
Standard Package 1
Win Source Part Number 957998-2PC4617QMB,315
Ultra Librarian 3D Model Ultra Librarian 2PC4617QMB,315 CAD Model

Description

The 2PC4617QMB,315 is a high-performance, NPN general-purpose transistor manufactured by NXP Semiconductors, a leader in the electronics industry. This discrete semiconductor product is designed for a wide range of applications, offering a perfect blend of efficiency and reliability for electronic circuits.

Key Features

  • Transistor Type: NPN - This transistor type is well-suited for amplification and switching applications due to its high current gain and ease of integration into various circuits.
  • Package: SOT883B - The compact SOT883B package is designed for surface-mount technology, making the 2PC4617QMB,315 ideal for space-constrained applications.
  • Collector-Emitter Voltage (Vceo): 50V - This voltage rating ensures that the transistor can handle moderate voltage applications while maintaining stability and performance.
  • Collector Current (Ic): 150mA - The collector current rating indicates the maximum continuous current the transistor can pass through the collector-emitter junction without degradation.
  • DC Current Gain (hFE): 100 - 600 - A measure of the transistor's amplification factor, indicating its efficiency in amplifying a signal.
  • Power Dissipation (Pd): 250mW - The maximum power the transistor can dissipate without exceeding its maximum operating temperature, ensuring longevity and reliability.
  • Operating Temperature Range: -55°C to +150°C - This wide temperature range allows the 2PC4617QMB,315 to operate effectively in various environmental conditions without performance degradation.

Applications

The versatility of the 2PC4617QMB,315 makes it suitable for a variety of applications, including:

  • Switching and amplification in consumer electronics
  • Driver stages in high-fidelity amplifiers and audio equipment
  • Signal processing in telecommunications
  • Control circuits in embedded systems
  • Power management in portable devices

With its robust design and excellent electrical characteristics, the 2PC4617QMB,315 from NXP is an excellent choice for designers looking for a reliable NPN transistor for their electronic projects.

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