The ZTX857 from Diodes Incorporated is a high-performance, silicon planar medium power transistor designed to deliver superior performance in demanding applications. This bipolar junction transistor (BJT) is a perfect choice for audio amplifiers, switching applications, and various other electronic circuits where robustness and reliability are crucial.

Key Features

• High Current Capability: The ZTX857 is capable of handling continuous collector currents up to 3A, making it suitable for high-power applications.
• High Breakdown Voltage: With a collector-emitter voltage (VCEO) of 300V, it offers excellent voltage handling capabilities for a wide range of uses.
• Low Saturation Voltage: This feature ensures efficient operation with minimal power loss, making the ZTX857 ideal for power-sensitive designs.
• Complementary PNP Type: The ZTX857 has a complementary PNP type, the ZTX957, providing designers with flexibility in creating push-pull configurations.

Applications

The versatility of the ZTX857 allows it to be used in a variety of applications, including:

• Linear power supplies
• Audio amplifiers
• Motor control circuits
• Switching regulators
• Driver stages in hi-fi amplifiers and television circuits

Technical Specifications

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The ZTX857 is manufactured in state-of-the-art facilities, ensuring that it meets the stringent requirements for reliability and performance in industrial and consumer applications.