The Infineon Technologies IPD80N04S3-06 is a N-Channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 90A at 25°C.

• Channel Type: N-Channel
• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current: 90A @ 25°C
• Power Dissipation (Max): 100W (Tc)
• Mounting Type: SMD (SMT)
• Gate-Source Threshold Voltage: 4V @ 52μA
• Gate Charge (Max): 47nC @ 10V
• Rds On @ Id,Vgs (Max): 5.2 mOhm @ 80A, 10V
• Operating Temperature: -55°C to 175°C (TJ)
• Package: PG-TO252-3, TO-252-3, DPak (2 Leads + Tab), SC-63
• Category: Discrete Semiconductor Products
• Popularity: Medium
• Supply and Demand: Sufficient