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SIHB24N65EF-GE3

Part No SIHB24N65EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2774 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB24
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277733-SIHB24N65EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB24N65EF-GE3 CAD Model

Description

The SIHB24N65EF-GE3 MOSFET is an N-channel FET that features a drain-to-source voltage of 650V and a continuous drain current of 24A at 25°C.

  • Drain-to-Source Voltage: 650V
  • Continuous Drain Current: 24A @ 25°C
  • Rds On: 156mOhm @ 12A, 10V
  • Input Capacitance: 2774pF @ 100V
  • Power Dissipation: 250W @ Tc
  • Gate Charge: 122nC @ 10Vgs
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Maximum Vgs: ±30V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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