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NTB85N03T4G

Part No NTB85N03T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 28V 85A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 28V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 2150pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083729-NTB85N03T4G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Automotive, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Lighting, Sensing & Instrumentation, Industrial
Ultra Librarian 3D Model Ultra Librarian NTB85N03T4G CAD Model

Description

The NTB85N03T4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a renowned leader in power and signal management solutions. This device is designed to meet a wide range of applications requiring efficient power conversion and management, making it an excellent choice for designers in the automotive, industrial, and consumer sectors.

Key Features:

  • Low R<sub>DS(on): The NTB85N03T4G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: With the ability to handle a continuous drain current of up to 85A, this MOSFET can support applications with high power demands.
  • High-Temperature Performance: This device is characterized for operation at junction temperatures of up to 175°C, ensuring reliability in harsh environments.
  • Logic Level Gate Drive: The MOSFET can be driven by logic-level voltages, simplifying the design of the gate drive circuitry.
  • Robust Package: The NTB85N03T4G comes in a durable D2PAK (TO-263) surface-mount package, providing a compact footprint while allowing for efficient heat dissipation.

Applications:

The NTB85N03T4G is well-suited for a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Switching regulators
  • Load switches

Technical Specifications:

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30V Continuous Drain Current (I<sub>D) 85A Power Dissipation (P<sub>D) 110W R<sub>DS(on) 3.5 mΩ Operating Temperature Range -55°C to +175°C

In summary, the ON Semiconductor NTB85N03T4G MOSFET is a powerful, efficient, and reliable component that is ideal for a wide range of power management applications. Its low on-resistance, high current handling capability, and high-temperature performance make it a versatile choice for designers looking to optimize their power systems.

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