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IRL3402STRL

Part No IRL3402STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 85A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 78nC @ 4.5V
Max Input Capacitance 3300pF @ 15V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 51A, 7V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047460-IRL3402STRL
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRL3402STRL CAD Model

Description

The Infineon Technologies IRL3402STRL MOSFET is a N-Channel power transistor designed for high voltage, high current applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 85A @ 25°C
  • Power Dissipation: 110W (Tc)
  • Maximum Rds On: 8 mOhm @ Id,Vgs 51A, 7V
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate-Charge: 78nC @ 4.5V
  • Maximum Input Capacitance: 3300pF @ 15V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Lifecycle Status: Obsolete (EOL)
  • Package Quantity: 800 per package

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