The IDT71256L35TDB is a high-speed asynchronous static RAM (SRAM) device manufactured by Integrated Device Technology (IDT). It is designed for applications requiring fast access times and reliable data storage. With its asynchronous operation and high-speed performance, it is suitable for various embedded systems and high-performance computing applications.

Applications

• Cache Memory: Used as cache memory in embedded systems and processors to improve data access speeds.
• Data Buffering: Employed as a buffer for temporary data storage in various applications.
• Real-Time Systems: Suitable for real-time applications where fast data access is critical.
• High-Speed Computing: Utilized in high-performance computing systems for fast data storage and retrieval.
• Communication Systems: Found in communication equipment for buffering data and ensuring reliable data transfer.

Features

• High-Speed Access: Offers a fast access time of 35ns, enabling rapid data retrieval and storage.
• Asynchronous Operation: Operates asynchronously, simplifying system design and eliminating the need for complex clock synchronization.
• Low Power Consumption: Designed for low power operation, making it suitable for battery-powered and energy-sensitive applications.
• TTL-Compatible Inputs and Outputs: Compatible with standard TTL logic levels, simplifying interfacing with other system components.

Benefits

• Increased System Performance: High-speed access time improves overall system performance and responsiveness.
• Simplified System Design: Asynchronous operation simplifies system design and reduces the need for complex interface circuitry.
• Reduced Power Consumption: Low power consumption extends battery life and reduces overall system power requirements.
• Reliable Data Storage: Provides reliable data storage for critical applications.

Additional Details

The IDT71256L35TDB is typically available in a ceramic DIP package (TDB). It operates over a standard commercial temperature range. The device requires a single 5V power supply. The memory array size is 32K x 8 bits. This SRAM provides a cost-effective solution for applications requiring high-speed and reliable data storage. Its asynchronous operation ensures ease of integration into various systems.