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Same model may have multiple batches, images only for reference.
AIMW120R060M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

AIMW120R060M1HXKSA1

Part No AIMW120R060M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description 1200V COOLSIC MOSFET PG-TO247-3
Datasheet
AIMW120R060M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1203085-AIMW120R060M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs
Series Automotive, AEC-Q101, CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian AIMW120R060M1HXKSA1 CAD Model

Description

The Infineon Technologies 1203085 is a N-Channel SiCFET (Silicon Carbide) transistor designed for automotive applications. 1203085 is manufactured by Infineon Technologies.

  • Channel Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Application: Automotive
  • Drain to Source Voltage (Vdss): 1200 V
  • Power Dissipation: 150W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Series: CoolSiC™
  • Package: Tube
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.3525 $67.0575
5+ $20.9105 $104.5525
8+ $20.1894 $161.5152
11+ $18.7473 $206.2203
14+ $18.0263 $252.3682
18+ $17.3052 $311.4936
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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