AIMW120R060M1HXKSA1

Part No AIMW120R060M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description 1200V COOLSIC MOSFET PG-TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs
Series Automotive, AEC-Q101, CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)

Description

The Infineon Technologies 1203085 is a N-Channel SiCFET (Silicon Carbide) transistor designed for automotive applications. With a drain to source voltage (Vdss) of 1200 V, this transistor offers high power dissipation of up to 150W (Tc). It operates in a wide temperature range of -55°C to 175°C (TJ), making it suitable for various automotive environments. The Infineon Technologies 1203085 is part of the CoolSiC™ series, which ensures reliable and efficient performance. This transistor is packaged in a tube for easy handling and installation. It is an active product, meaning it is currently available for purchase and use in automotive electronic systems.

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Pricing & Ordering

$13.1646 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity Unit Price Ext. Price
3+ $21.8178 $65.4534
5+ $20.4102 $102.0510
8+ $19.7064 $157.6512
11+ $18.2988 $201.2868
15+ $17.5950 $263.9250
18+ $16.8912 $304.0416
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 20 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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