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Same model may have multiple batches, images only for reference.
AUIRF3415 Real Image
Same model may have multiple batches, images only for reference.

AUIRF3415

Part No AUIRF3415
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 43A TO-220AB
Datasheet
AUIRF3415 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1020711-AUIRF3415
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRF3415 CAD Model

Description

The Infineon Technologies AUIRF3415 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 150V.

  • Continuous Drain Current: 43A (Tc) @ 25°C
  • Maximum Rds On at Id, Vgs: 42 mOhm @ 22A, 10V
  • Package: Through-hole TO-220AB
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Power Dissipation: 200W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 200nC @ 10V

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