The Infineon Technologies AUIRF7484Q HEXFET® MOSFET is a highly efficient N-channel FET designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs.

• Drain to source voltage (Vdss): 40 V
• Continuous drain current (Id): 14A (Ta)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 14A, 7V
• Vgs(th) (Max) @ Id: 2V @ 250μA
• Power dissipation (Max): 2.5W (Ta)
• Package / case: 8-SOIC (0.154", 3.90mm Width)
• Supplier device package: 8-SOIC
• Gate charge (Qg) (Max) @ Vgs: 100 nC @ 7 V
• Input capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
• Vgs (Max): ±8V
• Temperature range - operating: -55°C ~ 150°C (TJ)
• Drive voltage (Max Rds On, Min Rds On): 7V