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Same model may have multiple batches, images only for reference.
AUIRFL014N Real Image
Same model may have multiple batches, images only for reference.

AUIRFL014N

Part No AUIRFL014N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 1.5A SOT-223
Datasheet
AUIRFL014N Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 25 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Standard Package 80 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567129-AUIRFL014N
Ultra Librarian 3D Model Ultra Librarian AUIRFL014N CAD Model

Description

The AUIRFL014N is a N-Channel MOSFET transistor manufactured by Infineon Technologies. It is part of the HEXFET series, designed for use in discrete semiconductor products such as transistors and FETs.

  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 1.5A @ 25°C
  • Rds On (Max): 160mOhm @ 1.9A and 10V
  • Gate Charge (Qg): 11nC @ 10V
  • Mounting Type: surface mountable
  • Package: TO-261-4, TO-261AA
  • Maximum Power Dissipation: 1W
  • Operating Temperature Range: -55°C to 150°C
  • Status: obsolete

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