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Same model may have multiple batches, images only for reference.
AUIRFR024N Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRFR024N

Part No AUIRFR024N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 17A DPAK
Datasheet
AUIRFR024N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020746-AUIRFR024N
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian AUIRFR024N CAD Model

Description

The Infineon Technologies 1020746-AUIRFR024N is an N-channel MOSFET that is ideal for use in discrete semiconductor products.

  • Power Dissipation: 45W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 17A (Tc)
  • Rds On @ Id,Vgs: 75 mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 20nC @ 10V
  • Input Capacitance: 370pF @ 25V
  • Gate-Source Voltage: ±20V
  • Packaging: TO-252AA
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Package Quantity: 3k pcs

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Quantity Unit Price Ext. Price
5+ $10.8970 $54.4850
12+ $8.9412 $107.2944
18+ $8.6618 $155.9124
24+ $8.3824 $201.1776
31+ $8.1029 $251.1899
42+ $7.2647 $305.1174
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Availability: 21,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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