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AUIRFR3710ZTRL

Part No AUIRFR3710ZTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET N CHANNEL / N-Channel 100 V 42A (Tc) 140W (Tc) Surface Mount D-Pak
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2930 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567144-AUIRFR3710ZTRL
Ultra Librarian 3D Model Ultra Librarian AUIRFR3710ZTRL CAD Model

Description

The AUIRFR3710ZTRL is a single N-channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET®
  • Designed for: Various applications in discrete semiconductor products
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 42A @ 25°C
  • On-Resistance (Rds On): 18mOhm @ 33A and 10V gate-source voltage (Vgs)
  • Mounting: Surface mountable
  • Package: TO-252-3, DPak
  • Gate Charge (Qg): 100nC @ 10V
  • Input Capacitance (Ciss): 2930pF @ 25V drain-source voltage (Vds)
  • Attributes: High power dissipation, low on-resistance, and reliable performance

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.1363 $50.1808
39+ $2.5734 $100.3626
61+ $2.4930 $152.0730
83+ $2.4126 $200.2458
108+ $2.3321 $251.8668
144+ $2.0909 $301.0896
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,743 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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