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AUIRFR9024N

Part No AUIRFR9024N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 11A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567164-AUIRFR9024N
Ultra Librarian 3D Model Ultra Librarian AUIRFR9024N CAD Model

Description

The 567164-AUIRFR9024N is a P-channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET®
  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 11A @ 25°C
  • Maximum On-Resistance (Rds On): 175mOhm @ 6.6A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Maximum Power Dissipation: 38W
  • Mounting: Surface mount
  • Package: TO-252-3
  • Gate Charge (Qg): 19nC @ 10V
  • Input Capacitance (Ciss): 350pF @ 25V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0747 $52.9711
30+ $3.3433 $100.2990
47+ $3.2389 $152.2283
64+ $3.1344 $200.6016
83+ $3.0299 $251.4817
111+ $2.7165 $301.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,601 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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