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Same model may have multiple batches, images only for reference.
AUIRLR024Z International Rectifier
Same model may have multiple batches, images only for reference.

AUIRLR024Z

Part No AUIRLR024Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 58mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.9 nC @ 5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 25 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 522 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567223-AUIRLR024Z
Ultra Librarian 3D Model Ultra Librarian AUIRLR024Z CAD Model

Description

The AUIRLR024Z is a N-Channel MOSFET transistor from Infineon Technologies.

  • Product: N-Channel MOSFET transistor
  • Series: HEXFET
  • Manufacturer: Infineon Technologies
  • Vdss: 55 V
  • Id: 16A @ 25°C
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
  • Vgs(th): 3V @ 250μA
  • Power Dissipation: 35W (Tc)
  • Installation: Surface mount
  • Package: TO-252-3, DPak
  • Gate Charge: 9.9 nC @ 5V
  • Input Capacitance: 380 pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • ECCN: EAR99
  • Status: Active

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