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Same model may have multiple batches, images only for reference.
BC850CE6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BC850CE6327HTSA1

Part No BC850CE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT-23
Datasheet
BC850CE6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022473-BC850CE6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC850CE6327HTSA1 CAD Model

Description

The Infineon Technologies BC850CE6327HTSA1 is a high-frequency NPN transistor with a maximum collector-emitter breakdown voltage of 45V and a maximum current collector of 100mA.

  • Maximum Collector-Emitter Breakdown Voltage: 45V
  • Maximum Current Collector: 100mA
  • Collector-Emitter Saturation Voltage: 600mV @ 5mA and 100mA
  • Package: PG-SOT23-3
  • Operating Temperature Range: Up to 150°C (TJ)
  • Typical Gain (hFE): 420 @ 2mA and 5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,475+ $0.0393 $57.9675
3,575+ $0.0323 $115.4725
5,360+ $0.0323 $173.1280
7,410+ $0.0312 $231.1920
9,620+ $0.0300 $288.6000
13,045+ $0.0266 $346.9970
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Availability: 5,800 pieces
MOQ: 1475 pcs
Order Increment : 1 pcs
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