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Same model may have multiple batches, images only for reference.
BCP5316H6433XTMA1 Real Image
Same model may have multiple batches, images only for reference.

BCP5316H6433XTMA1

Part No BCP5316H6433XTMA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS PNP 80V 1A SOT223-4 / Bipolar (BJT) Transistor PNP 80 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-10
Datasheet
BCP5316H6433XTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Not For New Designs
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
Power - Max 2 W
Frequency - Transition 125MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10
Base Product Number BCP53
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names BCP 53-16 H6433,2156-BCP5316H6433XTMA1-448,BCP 53-16 H6433-ND,SP000748126
Standard Package 4,000
Win Source Part Number 1108602-BCP5316H6433XTMA1
Ultra Librarian 3D Model Ultra Librarian BCP5316H6433XTMA1 CAD Model

Description

The Infineon Technologies BCP5316H6433XTMA1 is a high-performance PNP bipolar transistor designed for use in a variety of applications.

  • Maximum Power Dissipation: 2 W
  • Collector-Emitter Breakdown Voltage: 80 V
  • Vce Saturation: 500mV @ 50mA, 500mA
  • DC Current Gain: 100 @ 150mA, 2V
  • Frequency Transition: 125MHz
  • Package: PG-SOT223-4-10
  • RoHS Compliant: Yes
  • Recommendation: Not Recommended for New Designs
  • Manufacturer: Infineon Technologies

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