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Same model may have multiple batches, images only for reference.
BCP54-16E6433 Real Image
Same model may have multiple batches, images only for reference.

BCP54-16E6433

Part No BCP54-16E6433
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS NPN 45V 1A SOT223  /  Bipolar (BJT) Transistor NPN 45 V 1 A 100MHz 2 W Surface Mount SOT-223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Infineon Technologies
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
Power - Max 2 W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2156-BCP54-16E6433,INFINFBCP54-16E6433
Standard Package 4,000
Win Source Part Number 974010-BCP54-16E6433
Ultra Librarian 3D Model Ultra Librarian BCP54-16E6433 CAD Model

Description

The Infineon Technologies 974010-BCP54-16E6433 is a bipolar junction transistor (BJT) designed for use in discrete semiconductor products.

  • Transistor Type: NPN
  • Maximum Power: 2 W
  • Collector Emitter Breakdown Voltage: 45 V
  • Maximum Collector Current: 1 A
  • Vce Saturation: 500mV @ 50mA and 500mA
  • DC Current Gain: 100 @ 150mA and 2V
  • Package: TO-261-4, TO-261AA package
  • Mounting: SMD (SMT) technology

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