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Same model may have multiple batches, images only for reference.
BCR 103T E6327 Real Image
Same model may have multiple batches, images only for reference.

BCR 103T E6327

Part No BCR 103T E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SC75
Datasheet
BCR 103T E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 20 @ 20mA, 5V
Max Vce (sat) 300mV @ 1mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 140MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 1022673-BCR 103T E6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCR 103T E6327 CAD Model

Description

The Infineon Technologies BCR 103T E6327 is a surface mount NPN - Pre-Biased transistor designed for use in discrete semiconductor products.

  • Mounting: Surface Mount
  • Type: NPN - Pre-Biased Transistor
  • Case/Package: PG-SC-75
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 250mW
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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