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Same model may have multiple batches, images only for reference.
BCR119E6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BCR119E6327HTSA1

Part No BCR119E6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT23-3 / Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin SOT-23 T/R
Datasheet
BCR119E6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel package
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) (Ohms) 4.7k
DC Current Gain (hFE) (Minimum) @ Ic, Vce 120 @ 5mA, 5V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
Frequency - Transition 150MHz
Power - Max 200mW
Mounting SMD
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Package PG-SOT23-3
Win Source Part Number 769794-BCR119E6327HTSA1
Popularity Medium
Supply and Demand Status Limited
Family Name BCR119
Introduction Date July 01, 2003
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian BCR119E6327HTSA1 CAD Model

Description

The BCR119E6327HTSA1, manufactured by Infineon Technologies, is an NPN pre-biased transistor.

  • Maximum Power: 200mW
  • Operating Temperature Range: -55°C to 150°C
  • Current Collector: 100mA
  • Voltage Collector Emitter Breakdown: 50V
  • Package: TO-236-3, SC-59, SOT-23-3

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Quantity Unit Price Ext. Price
785+ $0.0640 $50.2400
1,905+ $0.0525 $100.0125
2,950+ $0.0509 $150.1550
4,070+ $0.0492 $200.2440
5,255+ $0.0476 $250.1380
7,030+ $0.0427 $300.1810
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Availability: 108,000 pieces
MOQ: 785 pcs
Order Increment : 1 pcs
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