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BCR191WE6327

Part No BCR191WE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description BIPOLAR DIGITAL TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package PG-SOT323-3-1
Base Product Number BCR191
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1048888-BCR191WE6327
Ultra Librarian 3D Model Ultra Librarian BCR191WE6327 CAD Model

Description

The 908149 is a PNP pre-biased bipolar transistor from Infineon Technologies.

  • Series: BCR191
  • Application: automotive applications, meeting the AEC-Q101 standard
  • Package: SC-70, SOT-323 package
  • Package Quantity: 3,000 pcs
  • Maximum Power Rating: 250 mW
  • Maximum Collector Current: 100 mA
  • Voltage Breakdown (Collector-Emitter): 50 V
  • DC Current Gain: 50 @ collector current of 5 mA and a collector-emitter voltage of 5 V
  • Low Saturation Voltage: 300 mV @ a base current of 500 µA and a collector current of 10 mA
  • Frequency Transition: 200 MHz
  • Mounting: surface mount applications
  • Description: excellent choice for automotive electronic systems.

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