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Same model may have multiple batches, images only for reference.
BCR198SE6327BTSA1 Real Image
Same model may have multiple batches, images only for reference.

BCR198SE6327BTSA1

Part No BCR198SE6327BTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.25W SOT363
Datasheet
BCR198SE6327BTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Frequency - Transition 190MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1022715-BCR198SE6327BTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR198SE6327BTSA1 CAD Model

Description

The Infineon Technologies BCR198SE6327BTSA1 is a 2 PNP - Pre-Biased (Dual) transistor with a transition frequency of 190MHz.

  • Transition Frequency: 190MHz
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Package: PG-SOT363-6
  • Maximum Power Dissipation: 250mW
  • Resistor Values (Base and Emitter Base): 47k each
  • Typical Gain (hFE): 70 @ 5mA, 5V
  • Maximum Vce (sat): 300mV @ 500μA, 10mA
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)
  • Supply and Demand: in balance

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Quantity Unit Price Ext. Price
660+ $0.0878 $57.9480
1,615+ $0.0716 $115.6340
2,500+ $0.0693 $173.2500
3,450+ $0.0670 $231.1500
4,465+ $0.0647 $288.8855
5,885+ $0.0589 $346.6265
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