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Same model may have multiple batches, images only for reference.
BDP 949 E6327 Real Image
Same model may have multiple batches, images only for reference.

BDP 949 E6327

Part No BDP 949 E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-223-4
Collector Base Voltage (VCBO) 60 V
Collector Emitter Breakdown Voltage 60 V
Collector Emitter Voltage (VCEO) 60 V
Contact Plating Tin
Current Rating 3 A
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Frequency 100 MHz
Gain Bandwidth Product 100 MHz
Lead Free Yes
Max Breakdown Voltage 60 V
Max Collector Current 3 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 5 W
Min Operating Temperature -65 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 4
Polarity NPN
Power Dissipation 5 W
RoHS Compliant
Transition Frequency 100 MHz
Voltage Rating (DC) 60 V
Win Source Part Number 1049064-BDP 949 E6327
Categories RF Transistors(BJT)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BDP 949 E6327 CAD Model

Description

The Infineon Technologies 908471 is a surface mount NPN RF transistor with a frequency of 100 MHz and a power dissipation of 5 W.

  • Maximum voltage rating: 60 V
  • Maximum collector current: 3 A
  • Configuration: single element
  • Case/Package: SOT-223-4
  • Lead-free: Yes
  • RoHS compliant: Yes
  • Supply and demand status: shortage

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